首页> 外国专利> METHOD FOR EXTRACTING PARASITIC CAPACITANCE ELEMENT MODEL AND PROGRAM FOR EXTRACTING PARASITIC CAPACITYANCE ELEMENT MODEL

METHOD FOR EXTRACTING PARASITIC CAPACITANCE ELEMENT MODEL AND PROGRAM FOR EXTRACTING PARASITIC CAPACITYANCE ELEMENT MODEL

机译:提取寄生电容元模型的方法及提取寄生电容元模型的程序

摘要

PROBLEM TO BE SOLVED: To provide a method for extracting a parasitic capacitance element model with respect to a dimension-variable conductor structure by which the data amount of a database for calculating the capacitance is reduced.;SOLUTION: The method for extracting the parasitic capacitance element model in the wiring conductors of an electronic circuit having a layered structure comprises: extracting a two-dimensional capacitance model region from the three-dimensional structure of the facing or adjacent wiring conductors; and extracting a three-dimensional model region from a portion removing the two-dimensional capacitance model region from the three-dimensional structure. In addition, a capacitance approximate expression represented by an attentive variable parameter out of a plurality of parameters specifying the three-dimensional structure is derived for each of the two-dimensional capacitance model region and the three-dimensional capacitance model region. Addition to all the regions is applied to the capacitance approximate expression corresponding to each of the regions to derive the parasitic capacitance element model with respect to the capacitance between the entire three-dimensional structure wiring conductors.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种相对于尺寸可变的导体结构提取寄生电容元件模型的方法,通过该方法减少用于计算电容的数据库的数据量。解决方案:提取寄生电容的方法具有分层结构的电子电路的布线导体中的元素模型包括:从面对或相邻的布线导体的三维结构中提取二维电容模型区域;从从三维结构中去除二维电容模型区域的部分中提取三维模型区域。另外,针对二维电容模型区域和三维电容模型区域中的每一个,导出由指定三维结构的多个参数中的关注变量参数表示的电容近似表达式。将所有区域加到与每个区域相对应的电容近似表达式上,以得出相对于整个三维结构布​​线导体之间的电容的寄生电容元件模型。;版权所有:(C)2004,JPO

著录项

  • 公开/公告号JP2004145752A

    专利类型

  • 公开/公告日2004-05-20

    原文格式PDF

  • 申请/专利权人 SHARP CORP;

    申请/专利号JP20020311658

  • 发明设计人 TANI SADAHIRO;

    申请日2002-10-25

  • 分类号G06F17/50;H01L21/82;

  • 国家 JP

  • 入库时间 2022-08-21 23:34:07

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号