Accurate modeling for parasitic source resistance in two-dimensional electron gas field-effect transistors

摘要

An accurate two-layer model has been developed for parasitic source resistance in two-dimensional electron gas field-effect transistors (2DEGFETs). In this model, the 2DEG concentration-voltage and current density-voltage relations at the cap/barrier/2DEG junction are taken into account, based on the self-consistent charge control model and effective mass tunneling theory. Empirical 2DEG velocity field characteristics are also included. To show the feasibility of this method, the source resistance in conventional GaAs/AlGaAs 2DEGFETs was analyzed and the AlGaAs thickness dependence was discussed. For comparison, the lattice-matched GaInAs/AlInAs 2DEGFET and pseudomorphic GaInAs/AlGaAs 2DEGFET were examined. It was shown that introducing a highly doped cap layer leads to a drastic reduction in source resistance for pseudomorphic 2DEGFETs but has a very small effect for GaInAs/AlGaAs 2DEGFETs.