A Junctionless Gate-All-Around Silicon Nanowire FET of High Linearity and Its Potential Applications

摘要

The linearity of a gate-all-around junctionless silicon nanowire (SiNW) FET has been analyzed. The SiNW FET shows a perfectly linear $I_{D}$– $V_{G}$ relation and a nearly zero output conductance. The mechanism of its linear behaviors due to degenerate doping level has been also demonstrated. For RF applications, the proposed SiNW FET exhibits a much lower distortion for a whole range of load resistance, making it superior to modern short-channel MOSFET.