GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN_x as Gate Dielectric

摘要

In this letter, silicon nitride (SiN) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal–insulator–semiconductor high-electron-mobility transistors. The LPCVD-SiN exhibit improved gate dielectric performance than the plasma enhanced chemical vapor deposition-SiN, including smaller forward and reverse gate leakage, and higher forward gate breakdown voltage.