Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

摘要

Resistive random access memory (RRAM) is a promising emerging nonvolatile memory which offer high density integration in the form of cross-bar array design. Selector devices are a vital requirement to suppress the cross-talk issue. In this letter, we are going to demonstrate the coexistence of resistive switching (RS) and threshold switching (TS) in an ultrathin 2-nm Aluminium oxide (AlO)-based crossbar RRAM devices. Depending on current level the device itself can switch from TS to RS mode with a nonlinearity of . Stable TS of cycles has been achieved at 10 nA. Achievements of this letter offers the usability of 2-nm AlO RRAM devices as a selector and as a memory device for high density crossbar array integration.