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机译:底部电极的粗糙度对铂/氮化镍/镍1×1交叉式阵列电阻式随机存取存储单元的电阻转换特性的影响
School of Electrical Engineering, Korea University, Anam-dong 5-ga, Seongbuk-gu, Seoul 136-701, Republic of Korea;
School of Electrical Engineering, Korea University, Anam-dong 5-ga, Seongbuk-gu, Seoul 136-701, Republic of Korea;
School of Electrical Engineering, Korea University, Anam-dong 5-ga, Seongbuk-gu, Seoul 136-701, Republic of Korea;
School of Electrical Engineering, Korea University, Anam-dong 5-ga, Seongbuk-gu, Seoul 136-701, Republic of Korea;
School of Electrical Engineering, Korea University, Anam-dong 5-ga, Seongbuk-gu, Seoul 136-701, Republic of Korea;
School of Electrical Engineering, Korea University, Anam-dong 5-ga, Seongbuk-gu, Seoul 136-701, Republic of Korea;
Resistive switching memory; Nickel nitride films; Surface roughness;
机译:基于氮化物的交叉开关阵列电阻式随机存取存储器中有源区的尺寸依赖性电阻开关特性
机译:纳米金字塔底部电极对基于氮化镍膜的交叉开关阵列中双极电阻切换现象的影响
机译:电阻切换参数在电阻随机存取存储器交叉杆阵列的影响
机译:具有可移动底部电极的极小电阻式随机存取存储器测试单元结构
机译:基于五氧化二铜-铂金器件结构的纳米交叉电阻开关存储器的制作
机译:电极对钛酸锶镍电阻阻随机存取存储器开关行为的影响
机译:电极对钛酸锶电阻率电阻随机存取存储器开关行为的影响
机译:铂对镍氢电池中镍电极的影响