A Modified 1/ $f$ Noise Model for MOSFETs With Ultra-Thin Gate Oxide

摘要

A modified 1/ noise model has been proposed for MOSFETs with an ultra-thin gate oxide layer. It is revealed that as the gate length deceases, the normalized drain current noise spectra density also decreases, which does not coincide with the regular 1/ noise theory. It is found that the trap-assisted gate leakage affects the drain current 1/ noise, and for the first time, it is demonstrated that the equivalent oxide trap density, the free carrier density, as well as determine the 1/ noise. A modified quantitative model is then proposed, which can well predict the 1/ noise.