机译:基于
Dipt. di Sci. e Metodi dell'Ing., Univ. di Modena e Reggio Emilia, Modena, Italy;
III-V semiconductors; MOSFET; gallium arsenide; high-k dielectric thin films; indium compounds; semiconductor device models; (E, z) domain; C-V characteristics; G-V characteristics; InGaAs; MOS devices; bulk defect density; defect characterization technique; emission processes; high-k dielectric stacks; high-k/III-V MOSFET; interfacial defect density; lattice relaxation; multiphonon trap-assisted tunneling theory; physical distributed compact model; trap-assisted capture processes; Aluminum oxide; Capacitance; Dielectrics; Frequency measurement; Hafnium compounds; Integrated circuit modeling; Logic gates; C-V characteristics; C???V characteristics; G-V characteristics; G???V characteristics; III--V; III-V; InGaAs; high-k; interface and border traps; modeling; semiconductors; simulations; simulations.;
机译:闭环d
机译:
机译:关于
机译:混合