Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC

摘要

Three fully integrated bandgap voltage references (BGVRs) have been demonstrated in a 4H–SiC bipolar technology. The circuits have been characterized over a wide temperature range from 25 °C to 500 °C. The three BGVRs are functional and exhibit 46 ppm/°C, 131 ppm/°C, and 120 ppm/°C output voltage variations from 25 °C up to 500 °C. This letter shows that SiC bipolar BGVRs are capable of providing stable voltage references over a wide temperature range.