CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With at V and nA/

摘要

We report CMOS-compatible -channel InGaAs-on-insulator FinFETs obtained using a replacement metal gate fabrication flow. The fabricated devices feature 12-nm-thick SiN spacers, a scaled high-/metal gate (capacitance equivalent thickness of nm), raised source and drain doped to /cm, and fin width scaled down to 15 nm. Very good control of short-channel effects is demonstrated down to a gate length of 50 nm with a minimum subthreshold swing of 92 mV/decade at V and a drain-induced barrier lowering of 57 mV/V. An ON-state current ( of 156 is also reported for a supply voltage of 0.5 V and a fixed OFF-state current of 100 nA/. This value is the highest reported to date for CMOS-compatible InGaAs devices integrated on Si.