Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor

摘要

The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation resu it was shown that HfO2 is the best dielectric material with metal gate TiN, which giving better subthreshold swing (SS), drain-induced barrier lowing (DIBL), leakage current Ioff and Ion/Ioff ratio.