500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits

摘要

High-current 4H-SiC lateral BJTs for high-temperature monolithic integrated circuits are fabricated. The BJTs have three different sizes and the designs are optimized in terms of emitter finger width and length and the device layout to have higher current density (J), lower on-resistance (R), and more uniform current distribution. A maximum current gain (β) of >53 at significantly high current density was achieved for different sizes of SiC BJTs. The BJTs are measured from room temperature to 500 °C. An open-base breakdown voltage (V) of >50 V is measured for the devices.