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首页> 外文期刊>Electron Device Letters, IEEE >Heterogeneous Interconnect Stitching Technology With Compressible MicroInterconnects for Dense Multi-Die Integration
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Heterogeneous Interconnect Stitching Technology With Compressible MicroInterconnects for Dense Multi-Die Integration

机译:具有可压缩微互连的异构互连缝合技术,用于密集多芯片集成

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摘要

In this letter, a heterogeneous interconnect stitching technology is proposed. Stitch chips with high-density fine pitch wires are placed between the substrate and the active chips. Fine-pitch microbumps are used to bond the chips and provide high density and low-energy signaling. Compressible microinterconnects (CMIs) are used to compensate for package non-planarity and enable chip-package interconnection. A testbed with two passive chips and one stitch chip was fabricated and assembled. The post-assembly electrical resistance values of the microbumps and CMIs, as well as the mechanical compliance of the CMIs, are measured. The resistance of the microbumps ranges from 77.8 to 188.3 μΩ and the resistance of the CMIs ranges from 141.2 to 252.9 mQ. The mechanical compliance of the CMI is approximately 13.7 mm/N with a vertical elastic deformation of up to 30 μm.
机译:在这封信中,提出了一种异构互连拼接技术。在基板和有源芯片之间放置具有高密度细间距线的缝合芯片。细间距微凸块用于粘结芯片并提供高密度和低能量的信号。可压缩微互连(CMI)用于补偿封装的非平面性并实现芯片-封装的互连。制造并组装了具有两个无源芯片和一个缝针芯片的测试台。测量微型凸块和CMI的装配后电阻值以及CMI的机械柔度。微凸点的电阻范围为77.8至188.3μΩ,CMI的电阻范围为141.2至252.9 mQ。 CMI的机械柔度约为13.7 mm / N,垂直弹性变形最大为30μm。

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