Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment

摘要

A low equivalent-oxide-thickness of 0.58 nm and a low gate leakage current density of similar to 2 x 10(-5) A/cm(2) at V-G = V-FB - 1 V in p-substrate Ge (pGe) MOS device can be simultaneously achieved by a hydrogen plasma (H*) treatment on GeO2 interfacial layer (IL). It is found that the removal of GeOx with low oxidation state in GeO2 IL play crucial roles on electrical characteristics of pGe MOS device. Through a H* treatment, the electrical and reliability characteristics are improved by a GeO2 IL with high oxidation state. Therefore, a GeO2 IL with H* treatment is promising for high performance pGe MOS devices.