In_(0.53)Ga_(0.47)As based metal oxide semiconductor capacitors with atomic layer deposition ZrO_2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1 nm

摘要

The paper demonstrates properties of metal oxide semiconductor capacitors fabricated on molecular beam epitaxial In_(0.53)Ga_(0.47)As wafers with the atomic layer deposition ZrO_2 gate oxide. The equivalent oxide thickness of 0.8 nm was obtained for 5 nm thick ZrO_2, while the gate leakage current density at V_(FB)+1 V was as low as 0.1 A/cm~2. Sensitivity of capacitance-voltage characteristics to the metal gate work function along with low frequency dispersion of ～5%/decade served as a strong evidence of a nonpinned Fermi level at the oxide-InGaAs interface. Both electrical and structural properties remain stable up to 800℃.