Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET

摘要

A 1.2-kV rated 4H-SiC split-gate octagonal cell MOSFET (SG-OCTFET) is proposed and successfully fabricated in a 6-in foundry for the first time. The measured results quantify the benefits of the SG-OCTFET structure: improvement in high-frequency figures o