Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation

摘要

The 1.2-kV-rated 4H-SiC Split Gate MOSFET (SG-MOSFET) structure is demonstrated to have a superior high-frequency figures-of-merit (HF-FOMs) by numerical simulations, with experimental validation for the first time. Excellent electrical characteristics (specific on-resistance, threshold voltage, breakdown voltage, reverse transfer capacitance,and gate-todrain charge) were measured from devices fabricated on a 6-in SiC wafer. Compared with the conventional MOSFET, the SG-MOSFET has 2.4× smaller HF-FOM [R×Q] due to the reduced gate-to-drain charge.