A Novel Heat Dissipation Structure for Inhibiting Hydrogen Diffusion in Top-Gate a-InGaZnO TFTs

Hong-Chih Chen; Guan-Fu Chen; Po-Hsun Chen; Shin-Ping Huang; Jian-Jie Chen; Kuan-Ju Zhou; Chuan-Wei Kuo; Yu-Ching Tsao; An-Kuo Chu; Hui-Chun Huang; Wei-Chih Lai; Ting-Chang Chang

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A Novel Heat Dissipation Structure for Inhibiting Hydrogen Diffusion in Top-Gate a-InGaZnO TFTs

机译：抑制顶部栅极a-InGaZnO TFTs氢扩散的新型散热结构

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摘要

In order to better understand the reliability issues in top-gate a-InGaZnO (a-IGZO) thin-film transistors, this letter investigates the degradation mechanism of a device under self-heating stress (SHS). After applying hot carrier stress, a negative thresh

机译：为了更好地理解顶栅a-InGaZnO（a-IGZO）薄膜晶体管中的可靠性问题，本文探讨了器件在自热应力（SHS）下的退化机理。施加热载流子应力后，脱粒

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来源
《IEEE Electron Device Letters》 |2019年第9期|1447-1450|共4页
作者
Hong-Chih Chen; Guan-Fu Chen; Po-Hsun Chen; Shin-Ping Huang; Jian-Jie Chen; Kuan-Ju Zhou; Chuan-Wei Kuo; Yu-Ching Tsao; An-Kuo Chu; Hui-Chun Huang; Wei-Chih Lai; Ting-Chang Chang;
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作者单位

Department of Photonics National Cheng Kung University Tainan Taiwan;

Department of Physics National Sun Yat-sen University Kaohsiung Taiwan;

Department of Applied Science Naval Academy Kaohsiung Taiwan;

Department of Photonics National Sun Yat-sen;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Heating systems; Hydrogen; Logic gates; Stress; Threshold voltage; Degradation;

机译：加热系统;氢;逻辑门强调;门槛电压;降解;

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1. Abnormal Hump Effect Induced by Hydrogen Diffusion During Self-Heating Stress in Top-Gate Amorphous InGaZnO TFTs [J] . Hong-Chih Chen, Jian-Jie Chen, Yu-Fa Tu, Electron Devices, IEEE Transactions on . 2020,第7期

机译：在顶部门无定形Ingazno TFT中自加热应力期间氢气扩散诱导的异常驼峰效应
2. Numerical investigation of counter-flow diffusion flame of biogas-hydrogen blends: Effects of biogas composition, hydrogen enrichment and scalar dissipation rate on flame structure and emissions [J] . Mameri Abdelbaki, Tabet Fouzi International journal of hydrogen energy . 2016,第3期

机译：沼气-氢气混合物逆流扩散火焰的数值研究：沼气成分，氢富集和标量耗散率对火焰结构和排放的影响
3. Systematically engineered thermal metastructure for rapid heat dissipation/diffusion by considering the thermal eigenvalue (vol 159, 113487, 2019) [J] . Hyun Jaeyub, Wang Semyung Applied thermal engineering: Design, processes, equipment, economics . 2020,第期

机译：通过考虑热特征值（Vol 159,113487,2019），系统地设计用于快速散热/扩散的热代置
4. EFFECT OF DIFFERENT A-InGaZnO TFTs CHANNEL THICKNESS UPON SELF-HEATING STRESS [C] . Ting-Chang Chang, Po-Wen Chang, Yu-Ching Tsao, International conference on semiconductor technology for ultra-large scale integrated circuits and thin film transistors . 2019

机译：不同A-InGaZnO TFT通道厚度对自加热应力的影响
5. Thermal diffusion and flame structure in a laminar hydrogen jet diffusion flames [D] . Schauer, Frederick R. 1998

机译：层状氢射流扩散火焰中的热扩散和火焰结构
6. Effect of Surface Microstructure on the Heat Dissipation Performance of Heat Sinks Used in Electronic Devices [O] . Yuxin You, Beibei Zhang, Sulian Tao, 2021

机译：表面微观结构对电子器件中使用散热器散热性能的影响
7. Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress [O] . Hyojung Kim, Soonkon Kim, Jongmin Yoo, 2021

机译：在正偏置照明应力下，传导带偏离依赖性阈值电压移位在A-Ingazno TFT中
8. An analysis of internal supersonic flows with diffusion, dissipation and hydrogen-air combustion [R] . Dash, S. 1970

机译：内部超音速流动的扩散，耗散和氢气燃烧分析

A Novel Heat Dissipation Structure for Inhibiting Hydrogen Diffusion in Top-Gate a-InGaZnO TFTs

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