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Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

机译：在正偏置照明应力下，传导带偏离依赖性阈值电压移位在A-Ingazno TFT中

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Hyojung Kim; Soonkon Kim; Jongmin Yoo; Changyong Oh; Bosung Kim; Hyuncheol Hwang; Jungmin Park; Pyungho Choi; Jangkun Song; Kiju Im; Byoungdeog Choi;
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1. Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress [J] . Hyojung Kim, Soonkon Kim, Jongmin Yoo, AIP Advances . 2021,第3期

机译：在正偏置照明应力下，传导带偏移相关的阈值电压移位A-Ingazno TFT
2. The Effects of Valence Band Offset on Threshold Voltage Shift in a-InGaZnO TFTs Under Negative Bias Illumination Stress [J] . Kim Hyojung, Im Kiju, Park Jongwoo, IEEE Electron Device Letters . 2020,第5期

机译：价带偏移对负偏置照明应力下A-Ingazno TFT阈值电压移位的影响
3. Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate [J] . Liu X., Wang L.L., Ning C., Electron Devices, IEEE Transactions on . 2014,第12期

机译：带有铜栅的a-IGZO TFT的栅极偏置应力引起的阈值电压漂移效应
4. Estimation of threshold voltage shift in a-IGZO TFTs under different bias temperature stress by improved stretched-exponential equation [C] . Xin Ju, Xiang Xiao, Yuxiang Xiao, International Workshop on Active-Matrix Flatpanel Displays and Devices . 2016

机译：利用改进的拉伸指数方程估算a-IGZO TFT在不同偏置温度应力下的阈值电压漂移
5. Heterojunctions of the GaAs/AlGaAs system: Crystal growth by metalorganic chemical vapor deposition and characterization using capacitance-voltage techniques for the determination of the conduction band discontinuity [D] . Kawase, Yoshihiro 1987

机译：GaAs / AlGaAs系统的异质结：通过金属有机化学气相沉积进行的晶体生长以及使用电容电压技术进行表征，以确定导带不连续性
6. Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors [O] . Dapeng Wang, Mamoru Furuta 2019

机译：A-Ingazno薄膜晶体管中光漏电流和负偏压照明应力的退火诱导稳定性的定量分析
7. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress [O] . Niang Kham Man, Barquinha PMC, Martins RFP, 2016

机译：正栅偏置应力下非晶铟镓锌氧化物薄膜晶体管阈值电压漂移的热能分析

Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

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