Stateful Logic Operations in One-Transistor-One- Resistor Resistive Random Access Memory Array

摘要

Nonvolatile and cascadable stateful logic operations are experimentally demonstrated within a 1 k-bit one-transistor-one-resistor (1T1R) resistive random access memory (RRAM) array, where NAND gates serve as the building blocks. A robust dual-gate-voltage