Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate

摘要

We demonstrate normally-off 400 degrees C operation of n-channel and p-channel junction field-effect transistors (JFETs) fabricated by an ion implantation into a common high-purity semi-insulating silicon carbide (SiC) substrate. The side-gate structure proposed in this letter has good controllability of threshold voltage. The present results assure the potential of JFET-based complementary logic integrated circuits (ICs) operational at high temperature.