Heterostructure e.g. silicon-on-insulator type substrate, fabricating method for e.g. optoelectronic field, involves subjecting heterostructure to ionic implantation operation using ions of atomic species within ferroelectric thin layer

摘要

The method involves subjecting a heterostructure to an ionic implantation operation using ions of atomic species within a ferroelectric thin layer (2), where the heterostructure is formed of piles of layers comprising a substrate (1) and the thin layer. The thin layer is realized in a material e.g. lithium tantalate and lithium niobate. The thin layer is supported by an electrode forming layer (3) made of metal chosen from chromium, aluminum, platinum, titanium and gold or non-metal such as carbon and low doped silicon. Faces of the thin layer are in contact with a barrier forming layer (4). The substrate is made up of semiconductor materials such as silicon, polysilicon and germanium.