Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2/Si structure

摘要

In this study, we fabricated the n-channel metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using an Au/polyvinylidene fluoride-trifluoroethylene P(VDF-TrFE)/ZrO₂/Si(100) structures. The ZrO₂ thin film had the equivalent oxide thickness (EOT) value of around 9 nm. And the P(VDF-TrFE) film on a ZrO₂/Si structure showed good ferroelectric property with memory window width of 2.5 V for a bias voltage sweeping of ±7 V. The leakage current density of this MFIS structure showed very excellent insulation property with about 9 × 10?8 A/cm2 at 5 V. Based on these results, we fabricated and investigated MFIS-FETs with ferroelectric polymer P(VDF-TrFE) film and ZrO₂ buffer layer. The memory window width and on/off ratio of the MFIS-FET was about 4.5 V and 103, respectively. These results predicted that the P(VDF-TrFE) thin film would be useful for the realization of 1-transistor type ferroelectric memory.