Structural and electrical properties of metal-ferroelectric-insulator-semiconductor field-effect transistors using a Pt/Bi_(3.25)La_(0.75)Ti_3O_(12)/CeO_2/Si structure

摘要

The metal-ferroelectric-insulator-semiconductor (MFIS) capacitors were fabricated using a metal organic decomposition (MOD) method. The CeO_2 thin films were deposited as a buffer layer on Si substrate and Bi_(3.25)La_(0.75)Ti_3O_(12) (BLT) thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated by varying the CeO_2 layer thickness. The width of the memory window in the capacitance-voltage (C-V) curves for the MFIS structure decreased with increasing thickness of the CeO_2 layer. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) show no interdiffusion by using the CeO_2 film as buffer layer between the BLT film and Si substrate. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory field-effect-transistors (FETs) with large memory window.