Vertical ferroelectric field effect transistor structure, a structure including a pair of vertical ferroelectric field effect transistors, a vertical string of ferroelectric field effect transistors, and a pair of vertical ferroelectric field effect transistors laterally Opposing vertical strings

摘要

The vertical ferroelectric field effect transistor structure includes an insulating core. The transition metal dichalcogenide material surrounds the insulating core and has a lateral wall thickness of 1 to 7 monolayers. The ferroelectric gate dielectric material surrounds the transition metal dichalcogenide material. The conductive gate material surrounds the ferroelectric gate dielectric material. The transition metal dichalcogenide material extends in the height direction inside the conductive gate material and extends in the height direction outside the conductive gate material. The conductive contact is either a) in the height direction inside the conductive gate material, or b) on the lateral outer sidewall of the transition metal dichalcogenide material that exists in the height direction outside the conductive gate material. Direct contact. Further embodiments are disclosed. [Selection] Figure 1