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Ferroelectric-driven performance enhancement of graphene field-effect transistors based on vertical tunneling heterostructures

机译：基于垂直隧穿异质结构的石墨烯场效应晶体管的铁电驱动性能增强

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Department of Applied Physics

机译：应用物理系

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Yuan S; Yang Z; Xie C; Yan F; Dai J; Lau SP; Chan HLW; Hao J;
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年度 2016
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正文语种 eng
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1. Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures [J] . Yuan Shuoguo, Yang Zhibin, Xie Chao, Advanced Materials . 2016,第45期

机译：基于垂直隧穿异质结构的石墨烯场效应晶体管的铁电驱动性能增强
2. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J] . L. Britnell, R. V. Gorbachev, R. Jalil, Science . 2012,第6071期

机译：基于垂直石墨烯异质结构的场效应隧穿晶体管
3. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices [J] . Demetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone Scientific reports. . 2014,第1期

机译：作为后CMOS器件，基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
4. Flexible vertical field-effect transistor based on graphene/silicon heterostructure with ion-gel gate [C] . Zefeng Chen, Jianbin Xu International Conference on Nanotechnology . 2017

机译：基于带离子凝胶门的石墨烯/硅异质结构的柔性垂直场效应晶体管
5. An enhancement/depletion process for III-V compound semiconductor heterostructure field-effect transistors and optoelectronic integrated circuits. [D] . Tong, Minh Ho. 1992

机译：III-V化合物半导体异质结构场效应晶体管和光电集成电路的增强/耗尽工艺。
6. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices [O] . Demetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone -1

机译：作为后CMOS器件基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
7. Field-effect tunneling transistor based on vertical graphene heterostructures [O] . Britnell, L., Gorbachev, R. V., Jalil, R., 2012

机译：基于垂直石墨烯异质结构的场效应隧穿晶体管

Ferroelectric-driven performance enhancement of graphene field-effect transistors based on vertical tunneling heterostructures

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