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机译:基于垂直隧穿异质结构的石墨烯场效应晶体管的铁电驱动性能增强
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China|Hong Kong Polytech Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China;
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China|Hong Kong Polytech Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China;
机译:基于垂直石墨烯异质结构的场效应隧穿晶体管
机译:作为后CMOS器件,基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
机译:垂直隧道场效应晶体管基于硅-MOS2三维二维异质结构
机译:基于带离子凝胶门的石墨烯/硅异质结构的柔性垂直场效应晶体管
机译:III-V化合物半导体异质结构场效应晶体管和光电集成电路的增强/耗尽工艺。
机译:作为后CMOS器件基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
机译:基于垂直隧穿异质结构的石墨烯场效应晶体管的铁电驱动性能增强