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Field-effect transistor with two-dimensional channel realized with lateral heterostructures based on hybridized graphene
Field-effect transistor with two-dimensional channel realized with lateral heterostructures based on hybridized graphene
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机译:基于杂化石墨烯的横向异质结构实现的二维沟道场效应晶体管
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摘要
The invention is a field-effect transistor with a channel consisting of a thin sheet of one or more atomic layers of lateral heterostructures based on hybridized graphene. The role of lateral heterostructures is to modify the energy gap in the channel so as to enable the effective operation of the transistor in all bias regions. This solution solves the problem of the missing bandgap in single-layer and multi-layer graphene, which does not allow the fabrication of transistors that can be efficiently switched off. The possibility of fabricating lateral heterostructures, with patterns of domains with different energy dispersion relations, enables the realization of field-effect transistors with additional functionalities with respect to common transistors.
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