Effect of Weak Magnetic Field Treatment on Optical Properties ofEpitaxial GaN Films

摘要

The results of optical studies of the effect of pulsed magnetic field (B = 60 mT, τ = 1.2 ms, t = 5 min) on thestructural perfection and recombination properties of epitaxial GaN films grown on sapphire are presented. Nonmonotonicchanges in the spectral dependence of transmittance and photoluminescence were detected for GaN films after exposure tomagnetic field. They occurred during several days, with a maximum deviation from the initial values on the 12th day. Theobserved effect is presumably related to the magnetic field-induced changes in parameters of the surfaces and interfaces ofepitaxial films.