The magnetic field effect on optical properties of Sm-doped GaN thin films

摘要

We report the optical and magnetic properties of Sm doped wide-band-gap Gallium nitride (GaN) prepared by ion implantation. The photoluminescence (PL) intensity obviously increased as the increasing of annealing temperature from 700 to 1,100 ℃. Magnetic hysteresis was observed at room temperature. Our study was focusing on the influence of magnetic field on optical property of Sm~(3+) doped GaN. It was discovered that the PL intensity of Sm~(3+) increases remarkably under an external magnetic field. The mechanism of the magnetic ordering-modulated PL peak intensity of Sm~(3+) doped GaN films was discussed. This may open up a suite of potential applications in producing magneto-optical devices.