Magnetic and Optical Properties of MN-Doped GaN Thin Films and P-I-N Devices

摘要

In this paper, we report on the growth and characterization of single crystal GaMnN thin films and p-i-n junction devices grown by metal- organic chemical vapor deposition (MOCVD). Single crystal GaMnN films were achieved by optimizing the growth temperature, growth rate and the Mn:Ga gas phase ratio. A growth window for obtaining single crystal Ga(sub 1-x)Mn(sub x)N with 0.006=.