首页> 外文期刊>IEICE Electronics Express >Designing a new high gain CMOS amplifier towards a 17.22 MHz MEMS based Si oscillator for a cost effective clock generator IC
【24h】

Designing a new high gain CMOS amplifier towards a 17.22 MHz MEMS based Si oscillator for a cost effective clock generator IC

机译:设计一种面向基于17.22 MHz MEMS的Si振荡器的新型高增益CMOS放大器,以实现具有成本效益的时钟发生器IC

获取原文
           

摘要

References(6) A novel sustaining amplifier is designed and characterized for a Si-based MEMS resonator, in implementing a reference oscillator in 180 nm CMOS process. A two port electrical model of the MEMS resonator is used to compute the insertion loss (?76 dB) and phase shift (95°). Total open loop transimpedance gain is achieved as 122 dBΩ with ?70° phase shift, at the resonant frequency of 17.22 MHz. This amount of gain is investigated as capable to sustain MEMS resonator’s oscillation, in the realization of a cost effective, miniaturized and low power CMOS reference oscillator which oversees on application in clock generation.
机译:参考文献(6)在以180 nm CMOS工艺实现参考振荡器的过程中,针对基于Si的MEMS谐振器设计并表征了一种新型的维持放大器。 MEMS谐振器的两端口电气模型用于计算插入损耗(?76 dB)和相移(95°)。在17.22 MHz的谐振频率下,总开环互阻增益为122dBΩ,相移约为70°。研究这种增益量能够维持MEMS谐振器的振荡,从而实现了一种经济高效的,小型化且低功耗的CMOS参考振荡器,该振荡器在时钟生成中的应用受到监督。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号