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Field penetration induced charge redistribution effects on the field emission properties of carbon nanotubes―a first-principle study

机译:场穿透引起的电荷再分布对碳纳米管场发射特性的影响-第一性原理研究

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The effect of field penetration induced charge redistribution on the field emission properties of carbon nanotubes (CNTs) have been studied by the first-principle calculations. It is found that the carbon nanotube becomes polarized under external electric field leading to a charge redistribution. The resulting band bending induced by field penetration into the nanotube tip surface can further reduce the effective workfunction of the carbon nanotubes. The magnitude of the redistributed charge ΔQ is found to be nearly linear to the applied external field strength. In addition, we found that the capped (9, 0) zigzag nanotube demonstrates better field emission properties than the capped (5, 5) armchair nanotube due to the fact that the charge redistribution of π electrons along the zigzag-like tube axis is easier than for the armchair-like tube. The density of states (DOS) of the capped region of the nanotube is found to be enhanced with a value 30% higher than that of the sidewall part for the capped (5, 5) nanotube and 40% for the capped (9, 0) nanotube under an electric field of 0.33 V/A. Such enhancements of the DOS at the carbon nanotube tip show that electrons near the Fermi level will emit more easily due to the change of the surface band structure resulting from the field penetration in a high field.
机译:通过第一性原理计算研究了场渗透诱导的电荷再分布对碳纳米管(CNTs)场发射特性的影响。发现碳纳米管在外部电场下极化,导致电荷重新分布。由场渗透到纳米管尖端表面中引起的结果带弯曲可以进一步降低碳纳米管的有效功函数。发现重新分布的电荷ΔQ的大小与所施加的外部场强几乎成线性关系。此外,我们发现,封端的(9,0)之字形纳米管比封端的(5,5)扶手椅状碳纳米管表现出更好的场发射特性,这是因为π电子沿之字形管轴的电荷重新分布更容易而不是像扶手椅一样的管子。发现纳米管的被覆盖区域的状态密度(DOS)增强,其值比被覆盖的(5,5)纳米管的侧壁部分的状态密度高30%,而被覆盖的(9,0)的侧壁部分的状态密度高40%。 )纳米管在0.33 V / A的电场下。碳纳米管尖端的DOS的这种增强表明,费米能级附近的电子由于在高场中的场穿透所引起的表面带结构的变化而更容易发射。

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