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Field emission properties of N-doped capped single-walled carbon nanotubes: A first-principles density-functional study

机译:氮掺杂的封端单壁碳纳米管的场发射特性:第一性原理密度泛函研究

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摘要

The geometrical structures and field emission properties of pristine and N-doped capped (5,5) single-walled carbon nanotubes have been investigated using first-principles density-functional theory.The structures of N-doped carbon nanotubes are stable under field emission conditions.The calculated work function of N-doped carbon nanotube decreases drastically when compared with pristine carbon nanotube,which means the enhancement of field emission properties.The ionization potentials of N-doped carbon nanotubes are also reduced significantly.The authors analyze the field emission mechanism in terms of energy gap between the lowest unoccupied molecular orbital and the highest occupied molecular orbital,Mulliken charge population,and local density of states.Due to the doping of nitrogen atom,the local density of states at the Fermi level increases dramatically and donor states can be observed above the Fermi level.The authors' results suggest that the field emission properties of carbon nanotubes can be enhanced by the doping of nitrogen atom,which are consistent with the experimental results.
机译:用第一性原理密度泛函理论研究了原始的和N掺杂的封端的(5,5)单壁碳纳米管的几何结构和场发射特性.N掺杂的碳纳米管的结构在场发射条件下是稳定的与原始碳纳米管相比,N掺杂碳纳米管的计算功函数急剧下降,这意味着场发射特性得到了增强.N掺杂碳纳米管的电离势也显着降低。作者分析了场发射机理根据最低未占据分子轨道与最高占据分子轨道之间的能隙,Mulliken电荷种群以及态的局部密度。由于氮原子的掺杂,费米能级的局部态密度急剧增加,而施主态作者的结果表明碳n的场发射特性掺杂氮原子可以增强阳极管,这与实验结果是一致的。

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