Investigations Of Semiconductor Devices Using Sims; Diffusion, Contamination, Process Control

摘要

We have surveyed 22,155 analyses issues to know the portion of surface analysis at the total analyses activities. According to the survey result, the contribution of SIMS in the total analyses issues was about 7%. The portions of semiconductor process control, composition and contamination in the SIMS analyses issues are 25%, 29% and 16%, respectively. In this article, some examples of the semiconductor device process control, identification of contaminants, and failure analyses have been reviewed. The behavior of H, O, and Ti at the Pt/Ti/GalnZnO interfaces and their influences on the electrical property of thin film transistor are demonstrated. Also discolor issues including organic material contamination problem on Au pad are discussed in detail.