Fabrication of superconductor/semiconductor quasi-monolithic devices using epitaxial liftoff technology

摘要

This paper reports a study on the fabrication technology of high performance functional devices, where high temperature superconductor and compound semiconductor devices are monolithically integrated on the same substrate. We investigated optimal conditions for epitaxial liftoff process and succeeded in fabricating HTS device and GaAs MESFET on SrTiO/sub 3/ substrate without degrading characteristics of superconductor and semiconductor devices. We also carried out basic integrated circuit fabrication processes such as patterning and etching for quasi-monolithic structure. The results confirmed that fabricating high performance functional devices is feasible.