Fabrication of advanced semiconductor lasers and other optoelectronic devices using focused ion beam technology.

摘要

The progress made in recent years in the design and processing of semiconductor DBR/DFB lasers and waveguides has resulted in a surge in the development of optoelectronic integrated circuits (OEIC). Conventional technologies that employ lithography and etching suffer from complication and unreliability for OEIC fabrication. In this dissertation, an alternative approach using FIB compositional mixing technology is investigated.;The mixing mechanisms were studied using a short period Al;For the first time, the fabrication of DBR lasers and channel waveguides using FIB mixing technology was demonstrated. Third order DBR lasers as well as channel waveguides were fabricated by the single-step, maskless FIB mixing. Lasing operation was examined by optical pumping. With a pumping power 1.6 times above the threshold value, lasing modes were observed at a wavelength near 827 nm, with spacing of 3 A and a linewidth of 1.5 A. The maximum reflectivity of DBR was estimated to be ;The successful implementation of DBR lasers and channel waveguides has shown promising potential for the FIB compositional mixing technology in OEIC applications.