Fabrication of surface acoustic wave semiconductor coupled devices using epitaxial lift-off technology GaAs-LiNbO/sub 3/ structure

摘要

This paper presents high-performance surface acoustic wave semiconductor coupled devices in which highly functional compound semiconductor devices and highly efficient surface acoustic wave devices are monolithically integrated on the same substrate by using epitaxial lift-off technology. We investigated optimal conditions for lift-off and bonding processes and fabricated a quasi-monolithic structure with undamaged semiconductor films. We also investigated basic IC fabrication processes such as patterning and etching for the quasi-monolithic substrate. The bonded film is stable and rugged enough against these processes and the substrate can be handled as a monolithic substrate. Based on our experimental results, we confirm that fabricating high performance functional devices is feasible.