Epitaxial (100) GaAs Thin Films on Sapphire for Surface Acoustic Wave/Electronic Devices

摘要

In the past year it has been demonstrated that undoped <111> single crystal gallium arsenide could be grown on <0112> sapphire using the metalorganic chemical vapor deposition (MO-CVD) growth technique. An interesting and unexpected result from this work was that the GaAs films grown had a <111> orientation instead of the proposed <100> orientation. Keywords include: Metalorganic chemical vapor deposition, gallium arsenide, surface acoustic wave devices, and R-plane sapphire.