首页> 外国专利> THIN FILM SURFACE ACOUSTIC WAVE DEVICE, MANUFACTURING METHOD THEREOF AND PACKAGED THIN-FILM SURFACE ACOUSTIC WAVE UNIT

THIN FILM SURFACE ACOUSTIC WAVE DEVICE, MANUFACTURING METHOD THEREOF AND PACKAGED THIN-FILM SURFACE ACOUSTIC WAVE UNIT

机译:薄膜表面声波装置及其制造方法和包装的薄膜表面声波装置

摘要

PROBLEM TO BE SOLVED: To provide a surface acoustic wave device having a small cubic capacity with a reduced thickness and a reduced plane area, by integrally forming circuit substrate, capacitor and surface acoustic wave element.;SOLUTION: A thin film surface acoustic wave device 10 has a drive electrode 15, a connection electrode 16, and thin-film capacitor electrodes 17, 18 which are formed on a piezoelectric thin film 12 formed on a substrate 11. The substrate 11, the piezoelectric thin film 12, and the thin-film capacitor electrodes 17, 18 form a thin film capacitor. The drive electrode 15, the connection electrode 16, and the thin-film capacitor electrodes 17, 18 are connected by both a circuit 22 formed on a substantial surface of the substrate 11 and through holes 19.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:通过整体形成电路基板,电容器和表面声波元件,提供具有较小的立方容量,减小的厚度和减小的平面面积的表面声波装置;解决方案:薄膜表面声波装置图10所示的驱动器具有驱动电极15,连接电极16和薄膜电容器电极17、18,它们形成在形成于基板11上的压电薄膜12上。基板11,压电薄膜12,以及薄膜电容器电极17、18形成薄膜电容器。驱动电极15,连接电极16和薄膜电容器电极17、18通过形成在基板11的实质表面上的电路22和通孔19连接。版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006067271A

    专利类型

  • 公开/公告日2006-03-09

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20040247923

  • 申请日2004-08-27

  • 分类号H03H9/145;H03H3/08;

  • 国家 JP

  • 入库时间 2022-08-21 21:50:30

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