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Fabrication of niobium-carbonitride Josephson junctions onmagnesium-oxide substrates using chemical-mechanical polishing

机译:使用化学机械抛光在氧化镁基底上制备铌碳氮化物约瑟夫森结

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We have developed a fabrication technique for narrow NbCx N1-x/MgO/NbCxN1-x junctions on MgO substrates using chemical-mechanical polishing (CMP) for the removal of SiO2 insulation layer from the top of junctions. Parameters of CMP have been optimized so that the run-to-run deviation of removal rate for SiO2 is less than ±20% and uniformity across a 10 mm×10 mm area is better than ±20%. Using the optimized CMP, NbCxN1-x/MgO/NbCx N1-x junctions with width of 1-4 μm have been successfully fabricated. Fabricated junctions showed no superconducting leakage current and critical current densities of interconnections between the counter electrode and the wiring were larger than 1×10 8 A/m2. This CMP-based fabrication technique is applicable to SIS mixers and Josephson local oscillators operated near 1 THz
机译:我们已经开发了一种制造技术,用于使用化学机械抛光(CMP)去除MgO基板上狭窄的NbCx N1-x / MgO / NbCxN1-x结,以从结顶部去除SiO2绝缘层。 CMP的参数已经过优化,以使SiO2去除率的运行偏差小于±20%,并且在10 mm×10 mm区域内的均匀性优于±20%。使用优化的CMP,已成功制造了宽度为1-4μm的NbCxN1-x / MgO / NbCx N1-x结。制成的结点未显示超导泄漏电流,对电极和布线之间互连的临界电流密度大于1×10 8 A / m2。这种基于CMP的制造技术适用于工作在1 THz附近的SIS混频器和约瑟夫森本地振荡器

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