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机译:GaN衬底原子层沉积AlN和AlGaN之间的电气和界面特性的比较
Department of Visual Optics Seoul National University of Science and Technology (Seoultech) Seoul 01811 Republic of Korea;
Department of Materials Science and Engineering Seoul National University of Science and Technology (Seoultech) Seoul 01811 Republic of Korea;
Department of Materials Science and Engineering Seoul National University of Science and Technology (Seoultech) Seoul 01811 Republic of Korea;
Department of Materials Science and Engineering Seoul National University of Science and Technology (Seoultech) Seoul 01811 Republic of Korea;
AlN/GaN; AlGaN/GaN; Defective interfacial layer;
机译:AlN / GaN与AlGaN / GaN异质结肖特基二极管的电特性比较
机译:二维电子气的AlN / GaN / AlGaN和AlN / GaN / InAlN异质结构的参数对其电性能和晶体管特性的影响
机译:在Al_2O_3,Si和SiC衬底上外延生长的HEMT型AlGaN / AlN / GaN异质结构的电,光学和结构性质的比较
机译:Aln / Gan超晶格缓冲层厚度对Si衬底上Algan / Gan HFET电学性能的影响
机译:块状AlN单晶衬底上的富铝AlGaN和AlN生长
机译:Algan / GaN在没有GaN缓冲层的SIC器件上:电气和噪声特性
机译:AlN和GaN脉冲比在热原子层沉积AlGaN上的影响AlGaN in AlGaN / GaN肖特基二极管电学性能