Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

著录项

• 来源
  《中国物理：英文版》 |2014年第2期|421-425|共5页
• 作者

  Lü Yuan-Jie; Feng Zhi-Hong; Lin Zhao-Jun; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Han Ting-Ting;

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• 作者单位

  Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;

  Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;

  School of Physics, Shandong University, Jinan 250100, China;

  Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;

  Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;

  Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;

  Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;

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• 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
• 原文格式 PDF
• 正文语种 eng
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