Design and investigation of a balanced silicon-based plasmonic internal-photoemission detector

摘要

Silicon-based plasmon detector is a key component in designing CMOS-compatible integrated plasmonic circuits. Internal-photoemission plasmonic detectors in metal-semiconductor-metal (MSM) structure are promising devices for this purpose, because of their ability to detect infrared wavelengths. In this paper, a balanced MSM-integrated plasmon detector device is proposed to isolate the output from dark current. Performance characteristics of the new device are numerically simulated. In a specific bias point (V=3V), the output current is 3.18x10(-5)A, responsivity is 0.1288A/W, SNR is 21.7dB and area is about 2 mu m(2). Simulation results for this balanced plasmon detector, in comparison with experimental results of previous single-MSM device, demonstrate considerable dark current reduction.