Arbitrarily Polarized CMOS Terahertz Detector with Silicon-Based Plasmonic Antenna

摘要

In this paper, we demonstrate the idea to combine silicon-based plasmonic antennas with MOSFETs to form an arbitrarily polarized terahertz (THz) detector based on standard CMOS technology. For an optimized detector with a size of 162 µm x 161 µm, the simulation results show that the field response to the vertical polarized wave has a radio of 0.91 with 90 degree delay compared to the response to the horizontal polarized wave at 0.25 THz. The proposed arbitrarily polarized on chip detector occupies a small area size, which offers a novel approach to THz array imaging and sensing.