Tuning hole mobility in InP nanowires

摘要

Transport properties of holes in InP nanowires (NWs) were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature, and strain fields. Using molecular dynamics, we simulate NW structures, the longitudinal optical phonon (LO-phonon) energy renormalization, and lifetime. The valence band ground state changes between light- and heavy-hole character, as the strain fields and the NW size vary. Drastic changes in the mobility arise with the onset of resonance between the LO-phonons and the separation between valence subbands.