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Tuning the Size and Surface of InP Nanocrystals by Microwave-assisted Ionic Liquid Etching

机译:微波辅助离子液体刻蚀调节InP纳米晶体的尺寸和表面

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摘要

Semiconductors are materials whose conductivity is between metals and insulators. Semiconductor nanocrystals (NCs) have sizes in the range 2 to 10 nm. Because of their unique optical properties like tunable emission wavelength, narrow emission peak, and stability over dyes, they have potential applications in displays. Indium phosphide (InP) is considered a less toxic alternative to commercially used cadmium-based semiconductor NCs. Microwave-assisted (MA) methods using ionic liquids (ILs) afford fast reaction heating rates because of the good MW absorbing capacity of ILs. For tuning size and surface, which are some of the important problems associated with the InP NCs, new synthetic methods are reported herein. In MAIL etching HF generated in the microwave reaction etches the InP NCs surface.;Pyridinium and imidazolium based ILs containing tetrafluoroborate (BF 4--) and hexafluorophosphate (PF6-- ) ions yield luminescent NCs. In a silicon carbide (SiC) reaction vessel, which blocks most of the microwaves penetrating into the reaction, bigger NCs form than those from a Pyrex reaction vessel because of the higher reaction temperatures in the SiC vessel.;By changing microwave set-power (SP), different reaction times can be achieved. Though a small degree of change in average NC diameter of the NCs is observed at different SPs and reaction temperatures, addition of dodecylamine (DDA) yields NCs with average sizes between 3.2 to 4.2 nm with a broad size distribution. At lower SPs smaller NCs form and at higher SPs bigger NCs form. NC luminescence can be tuned from green (545 nm) to red (630 nm) in the visible region with quantum yields as high as 30%. Rapid heating and InP precursor activation might be responsible for the larger change in NC size. The effect of DDA on NC size is also verified by microwave reactions in SiC vessels.;ILs containing PF6-- ions at 280 °C will modify the surface of the NCs so the NC dispersibility changes from non-polar (toluene) to polar (DMSO) as the amount of IL increases. This is due to ligand stripping, which is the removal of large palmitic ligands from the NC surface. These NCs have broad absorption features and emission peaks with QYs of up to 30%. Fourier transform infrared spectroscopy indicates the absence of palmitic acid ligands on the NC surface and zeta potential measurements indicate the presence of anions on the NC surface. From X-ray photoelectron spectroscopy and nuclear magnetic resonance spectroscopy, the inorganic ion PO2F2- is identified on the NCs surface.
机译:半导体是导电性介于金属和绝缘体之间的材料。半导体纳米晶体(NC)的尺寸范围为2到10 nm。由于它们具有独特的光学特性,例如可调的发射波长,窄的发射峰以及对染料的稳定性,因此它们在显示器中具有潜在的应用。磷化铟(InP)被认为是商用镉基半导体NC的毒性较小的替代品。由于离子液体的良好的MW吸收能力,使用离子液体(IL)的微波辅助(MA)方法可提供快速的反应加热速率。为了调整尺寸和表面,这是与InP NC相关的一些重要问题,本文报道了新的合成方法。在MAIL蚀刻中,微波反应中产生的HF蚀刻InP NCs表面。含四氟硼酸根(BF 4--)和六氟磷酸根(PF6--)离子的基于吡啶和咪唑鎓的IL产生发光的NCs。在碳化硅(SiC)反应容器中,由于大部分SiC容器中的反应温度较高,因此形成的NC大于Pyrex反应容器中的NC。 SP),可以实现不同的反应时间。尽管在不同的SP和反应温度下观察到NC的平均NC直径变化很小,但是添加十二烷基胺(DDA)可以得到平均粒径在3.2至4.2 nm之间且粒径分布较宽的NC。在较低SP处,较小的NC形式,在较高SP处,较大的NC形式。 NC发光可以在可见光区域从绿色(545 nm)调整为红色(630 nm),量子产率高达30%。快速加热和InP前驱物活化可能是NC尺寸较大变化的原因。 DDA对NC尺寸的影响也已通过SiC容器中的微波反应得到证实。;在280°C的条件下,含有PF6-离子的IL将修饰NC的表面,因此NC的分散性从非极性(甲苯)变为极性(甲苯)。 DMSO)随着IL的增加而增加。这是由于配体剥离,这是从NC表面去除了较大的棕榈配体。这些NC具有广泛的吸收特征和发射峰,QY高达30%。傅里叶变换红外光谱表明在NC表面不存在棕榈酸配体,而Zeta电势测量表明在NC表面存在阴离子。通过X射线光电子能谱和核磁共振波谱,可以在NC表面识别出无机离子PO2F2-。

著录项

  • 作者

    Siramdas, Raghavender.;

  • 作者单位

    Kansas State University.;

  • 授予单位 Kansas State University.;
  • 学科 Chemistry.
  • 学位 Ph.D.
  • 年度 2018
  • 页码 155 p.
  • 总页数 155
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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