Engineering the metal gate electrode for controlling the threshold voltage of organic transistors

摘要

For practical applications of organic field-effect transistors (OFETs), the control of threshold voltage (VTH) is important as different circuits require different electrical characteristics. Here, we demonstrate two types of gate electrode structures to achieve this control, namely, via dual-metal gates and bilayer metal gates. The first approach uses different metallic materials, titanium, and platinum, while the second approach uses different thicknesses in a metal bilayer composed of aluminum and platinum. Our results show that the VTH is varied by more than 20% of the supply voltage without affecting the field-effect mobility values for both pentacene p-channel and C60 n-channel OFETs.