METHOD FOR CONTROLLING A THRESHOLD VOLTAGE OF A FIN TRANSISTOR BY A CORNER IMPLANTATION CAPABLE OF SEPARATELY CONTROLLING THRESHOLD VOLTAGE PROPERTIES OF MULTIPLE GATE TRANSISTORS

摘要

PURPOSE: A method for controlling a threshold voltage of a FIN transistor by a corner implantation is provided to obtain a desirable shift of a threshold voltage property by controlling the energy of an implantation process and an implantation dose to obtain the maximum density in corner regions.;CONSTITUTION: A semiconductor layer(202) is formed on a substrate(201). A semiconductor region(202A) formed on the semiconductor layer includes a drain region(251D) and a source region(251S) of a transistor(250A). A gate electrode structure(260A) includes gate dielectric materials(263) and separates electrode materials(262) from the drain region and the source region. A spacer structure(261) is formed on the sidewall of the gate electrode structure. A transistor(250B) is formed in a semiconductor region(202B).;COPYRIGHT KIPO 2013