ORGANIC THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF FOR CONTROLLING THRESHOLD VOLTAGE BY PROVIDING THRESHOLD VOLTAGE CONTROL LAYER BETWEEN GATE INSULATING LAYER AND ORGANIC SEMICONDUCTOR LAYER

摘要

PURPOSE: An organic thin film transistor and a fabricating method thereof are provided to control easily a threshold voltage by providing a threshold voltage control layer between a gate insulating layer and an organic semiconductor layer. CONSTITUTION: An organic thin film transistor includes a gate electrode(12), a gate insulating layer(14), a source electrode(16), a drain electrode(18), and an organic semiconductor layer(20). The organic thin film transistor further includes a threshold voltage control film(22), which is formed between the gate insulating layer and the organic semiconductor layer. A thickness of the threshold voltage control layer is less than or equal to 3nm.